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Infineon AUIRF1324WL

Automotive Q101 24V Single N-Channel HEXFET Power MOSFET in a TO-262 Wide Lead Package

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Compliance

Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

Height
20.7 mm
Length
10.67 mm
Width
4.83 mm

Physical

Case/Package
TO-262
Contact Plating
Tin
Mount
Through Hole
Number of Pins
3

Supply Chain

Lifecycle Status
Production

Technical

Continuous Drain Current (ID)
240 A
Drain to Source Breakdown Voltage
24 V
Drain to Source Resistance
1.16 mΩ
Drain to Source Voltage (Vdss)
24 V
Element Configuration
Single
Fall Time
110 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
7.63 nF
Max Junction Temperature (Tj)
175 °C
Max Operating Temperature
175 °C
Max Power Dissipation
300 W
Min Operating Temperature
-55 °C
Nominal Vgs
2 V
Number of Channels
1
Number of Elements
1
On-State Resistance
1.3 mΩ
Package Quantity
50
Power Dissipation
300 W
Rds On Max
1.3 mΩ
Rise Time
200 ns
Threshold Voltage
2 V
Turn-Off Delay Time
75 ns
Turn-On Delay Time
18 ns

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