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Infineon AUIRF1324S-7P

INFINEON AUIRF1324S-7P MOSFET Transistor, N Channel, 429 A, 24 V, 800 ohm, 10 V, 2 V

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Compliance

Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

Height
5.084 mm
Length
10.35 mm

Physical

Case/Package
D2PAK
Contact Plating
Tin
Mount
Surface Mount
Number of Pins
7

Supply Chain

Lifecycle Status
NRND

Technical

Continuous Drain Current (ID)
429 A
Drain to Source Breakdown Voltage
24 V
Drain to Source Resistance
800 µΩ
Drain to Source Voltage (Vdss)
24 V
Element Configuration
Single
Fall Time
93 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
7.7 nF
Max Junction Temperature (Tj)
175 °C
Max Operating Temperature
175 °C
Max Power Dissipation
300 W
Min Operating Temperature
-55 °C
Number of Channels
1
Number of Elements
1
On-State Resistance
1 mΩ
Package Quantity
50
Power Dissipation
300 W
Rds On Max
1 mΩ
Rise Time
240 ns
Threshold Voltage
2 V
Turn-Off Delay Time
86 ns
Turn-On Delay Time
19 ns

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