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Infineon AUIRF1010Z

Automotive Q101 55V Single N-Channel HEXFET Power MOSFET in a TO-220AB Package, TO220-3, RoHS

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Compliance

Radiation Hardening
1000
REACH SVHC
No SVHC
RoHS
7.5 mΩ

Dimensions

Height
16.51 mm
Length
10.668 mm
Width
IBS

Physical

Case/Package
TO-220AB
Contact Plating
Tin
Mount
-55 °C
Number of Pins
3

Supply Chain

Lifecycle Status
Production

Technical

Continuous Drain Current (ID)
94 A
Drain to Source Breakdown Voltage
55 V
Drain to Source Resistance
5.8 mΩ
Drain to Source Voltage (Vdss)
5.8 mΩ
Element Configuration
Single
Fall Time
92 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
24.6 mm
Max Junction Temperature (Tj)
175 °C
Max Operating Temperature
175 °C
Max Power Dissipation
175 °C
Min Operating Temperature
-55 °C
Number of Channels
1
Number of Elements
1
On-State Resistance
7.5 mΩ
Package Quantity
7.5 mΩ
Power Dissipation
140 W
Rds On Max
7.5 mΩ
Rise Time
150 ns
Threshold Voltage
2 V
Turn-Off Delay Time
36 ns
Turn-On Delay Time
Compliant

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