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Infineon AIMW120R080M1XKSA1

Transistor Silicon Carbide MOSFET N-CH 1200V 33A 3-Pin TO-247 Tube

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Dimensions

Height
25.4 mm

Technical

Continuous Drain Current (ID)
33 A
Drain to Source Resistance
80 mΩ
Drain to Source Voltage (Vdss)
80 mΩ
Gate to Source Voltage (Vgs)
20 V
Max Junction Temperature (Tj)
175 °C
Max Operating Temperature
175 °C
Min Operating Temperature
175 °C
Number of Channels
-55 °C
Power Dissipation
150 W
Turn-Off Delay Time
14 ns
Turn-On Delay Time
10 ns

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