跳转到主要内容

Infineon AIGB50N65H5ATMA1

Transistor, Igbt, 650V, 80A, To-263 Rohs Compliant: Yes

产品详情

Find similar products  

Dimensions

Height
4.7 mm

Technical

Collector Emitter Breakdown Voltage
650 V
Collector Emitter Saturation Voltage
1.65 V
Collector Emitter Voltage (VCEO)
650 V
Continuous Collector Current
80 A
Max Junction Temperature (Tj)
175 °C
Max Operating Temperature
175 °C
Min Operating Temperature
-40 °C
Power Dissipation
305 W
Turn-Off Delay Time
163 ns
Turn-On Delay Time
22 ns

合规性文件

购买

Call or Request Quote for Pricing
询价

Need Assistance?

Contact Us