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Infineon 2N6849

Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line

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Compliance

Lead Free
Contains Lead
Radiation Hardening
No
REACH SVHC
25 W
RoHS
Non-Compliant

Dimensions

Height
4.57 mm
Lead Length
14.22 mm

Physical

Case/Package
TO-39
Contact Plating
Lead, Tin
Mount
-55 °C
Number of Pins
3
Weight
2.4 g

Supply Chain

Lifecycle Status
Production

Technical

Continuous Drain Current (ID)
-6.5 A
Drain to Source Breakdown Voltage
-100 V
Drain to Source Resistance
300 mΩ
Drain to Source Voltage (Vdss)
300 mΩ
Dual Supply Voltage
-100 V
Gate to Source Voltage (Vgs)
20 V
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Min Operating Temperature
-55 °C
Nominal Vgs
-4 V
Number of Channels
1
Number of Elements
1
On-State Resistance
300 mΩ
Power Dissipation
300 mΩ
Termination
Through Hole
Threshold Voltage
-4 V
Turn-Off Delay Time
140 ns
Turn-On Delay Time
IBS

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