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GeneSiC Semiconductor GB02SLT12-252

Silicon Carbide (SiC) Merged PiN Schottky (MPS) Diode 1200V 2A TO-252-2

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Compliance

REACH SVHC
Yes
RoHS
Compliant

Dimensions

Height
2.385 mm

Physical

Case/Package
TO-252-2
Mount
Surface Mount
Number of Pins
2

Supply Chain

Lifecycle Status
Production

Technical

Average Rectified Current
5 A
Capacitance
127 pF
Current Rating
2 A
Element Configuration
Single
Forward Current
2 A
Max Forward Surge Current (Ifsm)
200 A
Max Junction Temperature (Tj)
175 °C
Max Operating Temperature
175 °C
Max Repetitive Reverse Voltage (Vrrm)
1.2 kV
Max Reverse Voltage (DC)
1.2 kV
Min Operating Temperature
-55 °C
Natural Thermal Resistance
2.3 °C/W
Peak Reverse Current
200 nA
Reverse Recovery Time
0 s

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