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GeneSiC Semiconductor GAP3SLT33-220FP

Silicon Carbide (SiC) Merged PiN Schottky (MPS) Diode 3300V 0.3A TO-220-FP

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Compliance

REACH SVHC
1 µA
RoHS
Compliant

Physical

Case/Package
TO-220-2
Mount
-55 °C
Number of Pins
1.42 °C/W

Supply Chain

Lifecycle Status
Production

Technical

Average Rectified Current
300 mA
Capacitance
42 pF
Current Rating
300 mA
Forward Current
300 mA
Max Forward Surge Current (Ifsm)
2:00 AM
Max Junction Temperature (Tj)
2 A
Max Operating Temperature
175 °C
Max Repetitive Reverse Voltage (Vrrm)
175 °C
Max Reverse Voltage (DC)
3.3 kV
Min Operating Temperature
-55 °C
Natural Thermal Resistance
1.42 °C/W
Peak Reverse Current
1 µA
Reverse Recovery Time
0 s

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