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GeneSiC Semiconductor GA04JT17-247

SiC Junction Transistor 1700V 180m TO-247-3

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Compliance

REACH SVHC
106 W
RoHS
500 mΩ

Dimensions

Height
25.934 mm

Physical

Case/Package
TO-247-3
Mount
-55 °C
Number of Pins
3

Technical

Continuous Drain Current (ID)
4:00 AM
Current Rating
15 A
Drain to Source Resistance
180 mΩ
Drain to Source Voltage (Vdss)
180 mΩ
Element Configuration
Single
Fall Time
50 ns
Max Operating Temperature
175 °C
Max Power Dissipation
175 °C
Max Repetitive Reverse Voltage (Vrrm)
1.7 kV
Min Operating Temperature
-55 °C
Number of Channels
1
Polarity
NPN
Power Dissipation
91 W
Rds On Max
500 mΩ
Rise Time
28 ns
Turn-Off Delay Time
19 ns
Turn-On Delay Time
10 ns

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