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GaN Systems GS66516T-E02-MR
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Compliance
RoHS
Non-Compliant
Dimensions
Height
580 µm
Technical
Continuous Drain Current (ID)
60 A
Drain to Source Breakdown Voltage
650 V
Drain to Source Resistance
25 mΩ
Drain to Source Voltage (Vdss)
650 V
Gate to Source Voltage (Vgs)
7 V
Manufacturer Package Identifier
GS66516T-E02-MR
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Min Operating Temperature
-55 °C
Number of Channels
1
Threshold Voltage
1.3 V
Turn-Off Delay Time
14.9 ns
Turn-On Delay Time
4.6 ns