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Fuji Electric 2MBI100U4A-120-50

Insulated Gate Bipolar Transistor, 150A I(C), 1200V V(BR)CES, N-Channel

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Compliance

RoHS
Compliant

Dimensions

Height
30 mm
Length
92 mm
Width
34 mm

Physical

Case/Package
Module
Mount
Panel
Number of Pins
7

Technical

Collector Emitter Breakdown Voltage
1.2 kV
Collector Emitter Saturation Voltage
2.2 V
Collector Emitter Voltage (VCEO)
1.2 kV
Isolation Voltage
2.5 kV
Max Collector Current
100 A
Max Operating Temperature
125 °C
Max Power Dissipation
540 W
Power Dissipation
540 W
Rise Time
320 ns

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