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Diodes Inc. DMP10H4D2S-7

DMP10H4D2S Series 100V 270 mA P-Channel Enhancement Mode Mosfet - SOT-23-3

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Compliance

RoHS
Compliant

Dimensions

Height
1.1 mm

Physical

Case/Package
TO-236-3
Mount
-55 °C

Technical

Continuous Drain Current (ID)
-270 mA
Drain to Source Breakdown Voltage
-100 V
Drain to Source Resistance
2.8 Ω
Drain to Source Voltage (Vdss)
2.8 Ω
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
87 pF
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Min Operating Temperature
-55 °C
Number of Channels
1
Power Dissipation
380 mW
Rds On Max
4.2 Ω
Turn-Off Delay Time
8.4 ns
Turn-On Delay Time
3.3 ns

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