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Diodes Inc. DMN65D8LFB-7B

Single N-Channel 60 V 4 Ohm 0.4 nC 430 mW Silicon SMT Mosfet - UFDFN-3

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Compliance

Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
3 Ω

Physical

Case/Package
DFN EP
Mount
-55 °C
Number of Pins
3

Technical

Continuous Drain Current (ID)
400 mA
Drain to Source Breakdown Voltage
60 V
Drain to Source Resistance
3 Ω
Drain to Source Voltage (Vdss)
3 Ω
Element Configuration
Single
Fall Time
6.29 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
25 pF
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Min Operating Temperature
-55 °C
Number of Channels
1
Number of Elements
1
Packaging
Cut Tape (CT)
Power Dissipation
840 mW
Rds On Max
3 Ω
Rise Time
3.15 ns
Turn-Off Delay Time
12.025 ns
Turn-On Delay Time
Compliant

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