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Diodes Inc. DMN65D8LDW-7

Transistor MOSFET Array Dual N-CH 60V 200mA 6-Pin SOT-363 T/R

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Compliance

Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

Height
1 mm
Length
2.2 mm
Width
1.35 mm

Physical

Case/Package
SOT-363
Contact Plating
Tin
Mount
-55 °C
Number of Pins
6
Weight
6.010099 mg

Technical

Continuous Drain Current (ID)
180 mA
Drain to Source Breakdown Voltage
60 V
Drain to Source Resistance
6 Ω
Drain to Source Voltage (Vdss)
6 Ω
Fall Time
6.3 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
1.1 mm
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Min Operating Temperature
-55 °C
Number of Channels
2
Number of Elements
2
Power Dissipation
300 mW
Rds On Max
6 Ω
Resistance
6 Ω
Rise Time
6 Ω
Turn-Off Delay Time
3.2 ns
Turn-On Delay Time
3.3 ns

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