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Diodes Inc. DMN63D8LDW

DMN63D8LDW, Diodes Inc., Mosfets

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Dimensions

Height
1.1 mm

Technical

Continuous Drain Current (ID)
220 mA
Drain to Source Breakdown Voltage
30 V
Drain to Source Resistance
2.8 Ω
Drain to Source Voltage (Vdss)
2.8 Ω
Gate to Source Voltage (Vgs)
20 V
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Min Operating Temperature
150 °C
Number of Channels
-55 °C
Power Dissipation
300 mW
Turn-Off Delay Time
12 ns
Turn-On Delay Time
Y

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