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Diodes Inc. DMN6075S-7

Transistor, 60V, N-channel, enhancement mode MOSFET, 2.5A, SOT-23 Diodes Inc DMN6075S-7

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Compliance

RoHS
Compliant

Dimensions

Height
1.1 mm

Physical

Case/Package
TO-236-3
Mount
Surface Mount

Technical

Continuous Drain Current (ID)
2 A
Drain to Source Breakdown Voltage
60 V
Drain to Source Resistance
69 mΩ
Drain to Source Voltage (Vdss)
60 V
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
606 pF
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
800 mW
Min Operating Temperature
-55 °C
Number of Channels
1
Power Dissipation
800 mW
Rds On Max
85 mΩ
Turn-Off Delay Time
35 ns
Turn-On Delay Time
3.5 ns

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