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Diodes Inc. DMN6070SSD-13
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Compliance
Radiation Hardening
No
RoHS
80 mΩ
Dimensions
Height
1.5 mm
Length
4.95 mm
Width
IBS
Physical
Case/Package
SOIC
Mount
-55 °C
Number of Pins
8
Weight
73.992255 mg
Technical
Continuous Drain Current (ID)
3.3 A
Drain to Source Breakdown Voltage
60 V
Drain to Source Resistance
70 mΩ
Drain to Source Voltage (Vdss)
70 mΩ
Element Configuration
Dual
Fall Time
11 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
588 pF
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Min Operating Temperature
-55 °C
Number of Channels
2
Number of Elements
2
Packaging
Tape & Reel
Power Dissipation
1.5 W
Rds On Max
80 mΩ
Rise Time
4.1 ns
Turn-Off Delay Time
35 ns
Turn-On Delay Time
Compliant