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Diodes Inc. DMN53D0LDW-7

Transistor, dual N-channel, enhancement mode, 50V, 0.36A, MOSFET, SOT-363

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Compliance

RoHS
1.6 Ω

Physical

Case/Package
SOT-363
Mount
-55 °C
Weight
6.010099 mg

Technical

Continuous Drain Current (ID)
360 mA
Drain to Source Breakdown Voltage
50 V
Drain to Source Resistance
4.5 Ω
Drain to Source Voltage (Vdss)
4.5 Ω
Element Configuration
Dual
Fall Time
11 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
46 pF
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Min Operating Temperature
-55 °C
Number of Channels
2
Packaging
Cut Tape (CT)
Rds On Max
1.6 Ω
Rise Time
2.5 ns
Turn-Off Delay Time
19 ns
Turn-On Delay Time
Compliant

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