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Diodes Inc. DMN4020LFDE-7

Transistor, Mosfet, N-ch, 40V, 8A, 660MW, 6-UDFN Ep

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Compliance

RoHS
20 mΩ

Dimensions

Height
580 µm
Length
2.05 mm
Width
Compliant

Physical

Case/Package
DFN
Mount
-55 °C
Number of Pins
6

Technical

Continuous Drain Current (ID)
8:00 AM
Drain to Source Breakdown Voltage
8 A
Drain to Source Resistance
20 mΩ
Drain to Source Voltage (Vdss)
20 mΩ
Element Configuration
Single
Fall Time
4.8 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
580 µm
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Min Operating Temperature
-55 °C
Number of Channels
1
Rds On Max
20 mΩ
Rise Time
7.1 ns
Turn-Off Delay Time
15.1 ns
Turn-On Delay Time
5.3 ns

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