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Diodes Inc. DMN26D0UFB4-7

Single N-Channel 20 V 350 mW Silicon Surface Mount Mosfet - DFN-3

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Compliance

Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

Height
400 µm
Length
1.05 mm
Width
650 µm

Physical

Case/Package
DFN
Mount
Surface Mount
Number of Pins
3

Technical

Continuous Drain Current (ID)
240 mA
Drain to Source Breakdown Voltage
20 V
Drain to Source Resistance
1.8 Ω
Drain to Source Voltage (Vdss)
20 V
Element Configuration
Single
Fall Time
15.2 ns
Gate to Source Voltage (Vgs)
10 V
Input Capacitance
14.1 pF
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
350 mW
Min Operating Temperature
-55 °C
Number of Channels
1
Number of Elements
1
Power Dissipation
350 mW
Rds On Max
3 Ω
Resistance
10 Ω
Rise Time
7.9 ns
Turn-Off Delay Time
13.4 ns
Turn-On Delay Time
3.8 ns

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