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Diodes Inc. DMN2050LFDB-7

Transistor MOSFET Array Dual N-CH 20V 4.5A 6-Pin uDFN2020 T/R

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Compliance

Radiation Hardening
No
RoHS
45 mΩ

Dimensions

Height
605 µm

Physical

Case/Package
DFN
Mount
-55 °C

Technical

Continuous Drain Current (ID)
3.3 A
Drain to Source Breakdown Voltage
20 V
Drain to Source Resistance
28 mΩ
Drain to Source Voltage (Vdss)
28 mΩ
Fall Time
8 ns
Gate to Source Voltage (Vgs)
12 V
Input Capacitance
605 µm
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Min Operating Temperature
-55 °C
Number of Channels
2
Packaging
Tape & Reel (TR)
Power Dissipation
730 mW
Rds On Max
45 mΩ
Rise Time
8 ns
Turn-Off Delay Time
25 ns
Turn-On Delay Time
5 ns

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