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Diodes Inc. DMN2029USD-13

Dual N-Channel 20 V 35 mOhm 10.4 nC 1.2 W Silicon Surface Mount Mosfet - SOIC-8

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Compliance

Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
25 mΩ

Dimensions

Height
1.5 mm
Length
4.95 mm
Width
Compliant

Physical

Case/Package
SO
Mount
-55 °C
Number of Pins
8

Technical

Continuous Drain Current (ID)
5.8 A
Drain to Source Resistance
35 mΩ
Drain to Source Voltage (Vdss)
35 mΩ
Fall Time
53.5 ns
Gate to Source Voltage (Vgs)
8 V
Input Capacitance
1.171 nF
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Min Operating Temperature
-55 °C
Packaging
Tape & Reel
Rds On Max
25 mΩ
Rise Time
33.3 ns
Turn-Off Delay Time
119.3 ns
Turn-On Delay Time
16.5 ns

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