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Diodes Inc. DMN2016UTS-13

Transistor MOSFET Array Dual N-CH 20V 8.58A 8-Pin TSSOP T/R

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Compliance

Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
14.5 mΩ

Dimensions

Height
1.025 mm
Length
4.5 mm
Width
IBS

Physical

Case/Package
TSSOP
Mount
-55 °C
Number of Pins
8
Weight
157.991892 mg

Technical

Continuous Drain Current (ID)
8.58 A
Drain to Source Breakdown Voltage
20 V
Drain to Source Resistance
16.5 mΩ
Drain to Source Voltage (Vdss)
16.5 mΩ
Element Configuration
Dual
Fall Time
16.27 ns
Gate to Source Voltage (Vgs)
8 V
Input Capacitance
1.495 nF
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Min Operating Temperature
-55 °C
Number of Channels
2
Number of Elements
2
Power Dissipation
880 mW
Rds On Max
14.5 mΩ
Resistance
14.5 mΩ
Rise Time
14.5 mΩ
Turn-Off Delay Time
11.66 ns
Turn-On Delay Time
Compliant

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