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Diodes Inc. DMN2011UFDE-7

Single N-Channel 20 V 35 mOhm 36 nC 0.61 W Silicon SMT Mosfet - UDFN-6

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Compliance

RoHS
9.5 mΩ

Physical

Mount
-55 °C

Technical

Continuous Drain Current (ID)
11.7 A
Drain to Source Resistance
15 mΩ
Drain to Source Voltage (Vdss)
15 mΩ
Element Configuration
Single
Fall Time
13.5 ns
Gate to Source Voltage (Vgs)
12 V
Input Capacitance
2.248 nF
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Min Operating Temperature
-55 °C
Number of Channels
1
Packaging
Tape & Reel (TR)
Rds On Max
9.5 mΩ
Rise Time
2.6 ns
Turn-Off Delay Time
21.6 ns
Turn-On Delay Time
3.6 ns

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