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Diodes Inc. DMN2009LSS-13

Single N-Channel 20 V 12 mOhm 28.9 nC 2 W Silicon Surface Mount Mosfet - SOIC-8

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Compliance

Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

Height
560 µm
Length
4.6 mm
Width
4.25 mm

Physical

Case/Package
SOP
Mount
Surface Mount
Number of Pins
8
Weight
850.995985 mg

Technical

Continuous Drain Current (ID)
12 A
Drain to Source Breakdown Voltage
20 V
Drain to Source Resistance
8 mΩ
Drain to Source Voltage (Vdss)
20 V
Gate to Source Voltage (Vgs)
12 V
Input Capacitance
2.555 nF
Max Operating Temperature
150 °C
Max Power Dissipation
2 W
Min Operating Temperature
-55 °C
Number of Channels
1
Number of Elements
1
Packaging
Tape & Reel
Power Dissipation
2 W
Rds On Max
8 mΩ

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