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Diodes Inc. DMN10H220L-7

Transistor, 100V, N-channgel, enhancement mode MOSFET, 1.6A, SOT-23 Diodes Inc DMN10H220L-7

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Compliance

RoHS
Compliant

Dimensions

Height
1.1 mm

Physical

Case/Package
TO-236-3
Mount
-55 °C
Weight
1.437803 g

Technical

Continuous Drain Current (ID)
1.4 A
Drain to Source Breakdown Voltage
100 V
Drain to Source Resistance
220 mΩ
Drain to Source Voltage (Vdss)
220 mΩ
Element Configuration
Single
Fall Time
3.6 ns
Gate to Source Voltage (Vgs)
16 V
Input Capacitance
401 pF
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Min Operating Temperature
-55 °C
Number of Channels
1
Packaging
Cut Tape (CT)
Power Dissipation
1.3 W
Rds On Max
220 mΩ
Rise Time
220 mΩ
Turn-Off Delay Time
8.2 ns
Turn-On Delay Time
6.8 ns

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