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Diodes Inc. DMG6602SVT-7

N & P Channel 30 V 60 mOhm Complementary Pair Enhancement Mode Mosfet-TSOT-23-6

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Compliance

Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

Height
1 mm
Length
2.9 mm
Width
1.6 mm

Physical

Case/Package
SOT-23-6
Mount
Surface Mount
Number of Pins
6

Technical

Continuous Drain Current (ID)
2.8 A
Drain to Source Breakdown Voltage
30 V
Drain to Source Resistance
140 mΩ
Drain to Source Voltage (Vdss)
30 V
Fall Time
3 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
400 pF
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
840 mW
Min Operating Temperature
-55 °C
Number of Channels
2
Number of Elements
2
Power Dissipation
840 mW
Rds On Max
60 mΩ
Resistance
95 mΩ
Rise Time
5 ns
Turn-Off Delay Time
13 ns
Turn-On Delay Time
3 ns

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