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Diodes Inc. DMG4800LSD-13

DMG4800 Series Dual N-Channel 30 V 8.5 A 16 Mohm Mosfet - SOIC-8

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Compliance

Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

Height
1.7 mm
Length
4.95 mm
Width
3.95 mm

Physical

Case/Package
SOIC
Mount
Surface Mount
Number of Pins
8
Weight
73.992255 mg

Technical

Continuous Drain Current (ID)
7.5 A
Drain to Source Breakdown Voltage
30 V
Drain to Source Resistance
12 mΩ
Drain to Source Voltage (Vdss)
30 V
Element Configuration
Dual
Fall Time
8.55 ns
Gate to Source Voltage (Vgs)
25 V
Input Capacitance
798 pF
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
1.17 W
Min Operating Temperature
-55 °C
Number of Channels
2
Number of Elements
2
Packaging
Tape and Reel
Power Dissipation
1.17 W
Rds On Max
16 mΩ
Rise Time
4.5 ns
Threshold Voltage
1.6 V
Turn-Off Delay Time
26.33 ns
Turn-On Delay Time
5.03 ns

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