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Diodes Inc. DMG4800LK3-13

Single N-Channel 30 V 1.71 W 8.7 nC Silicon Surface Mount Mosfet - TO-252-3

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Compliance

Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
17 mΩ

Physical

Case/Package
TO-252-3
Mount
-55 °C
Weight
3.949996 g

Technical

Continuous Drain Current (ID)
10:00 AM
Drain to Source Breakdown Voltage
10 A
Drain to Source Resistance
12 mΩ
Drain to Source Voltage (Vdss)
12 mΩ
Fall Time
8.55 ns
Gate to Source Voltage (Vgs)
25 V
Input Capacitance
798 pF
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Min Operating Temperature
-55 °C
Number of Channels
2
Number of Elements
1
Packaging
Tape & Reel (TR)
Power Dissipation
1.71 W
Rds On Max
17 mΩ
Rise Time
4.5 ns
Turn-Off Delay Time
26.33 ns
Turn-On Delay Time
Compliant

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