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Diodes Inc. DMG4496SSS-13

Single N-Channel 30 V 29 mOhm 4.7 nC 1.42 W Silicon Mosfet - SOIC-8

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Compliance

Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
21.5 mΩ

Dimensions

Height
1.5 mm
Length
4.95 mm
Width
IBS

Physical

Case/Package
SOIC
Mount
-55 °C
Number of Pins
8
Weight
73.992255 mg

Technical

Continuous Drain Current (ID)
10:00 AM
Drain to Source Breakdown Voltage
10 A
Drain to Source Resistance
16 mΩ
Drain to Source Voltage (Vdss)
16 mΩ
Element Configuration
Single
Fall Time
4.9 ns
Gate to Source Voltage (Vgs)
25 V
Input Capacitance
493.5 pF
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Min Operating Temperature
-55 °C
Number of Channels
1
Number of Elements
1
Packaging
Cut Tape
Power Dissipation
1.42 W
Rds On Max
21.5 mΩ
Rise Time
3.64 ns
Turn-Off Delay Time
19.5 ns
Turn-On Delay Time
Compliant

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