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Diodes Inc. 2DB1713-13

DIODES INC. 2DB1713-13 Bipolar (BJT) Single Transistor, PNP, 12 V, 180 MHz, 900 mW, 1.5 A, 270 hFE

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Compliance

Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

Height
1.5 mm
Length
4.5 mm
Width
2.5 mm

Physical

Case/Package
SOT-89
Mount
Surface Mount
Number of Pins
4
Weight
51.993025 mg

Technical

Collector Base Voltage (VCBO)
15 V
Collector Emitter Breakdown Voltage
12 V
Collector Emitter Saturation Voltage
-250 mV
Collector Emitter Voltage (VCEO)
12 V
Element Configuration
Single
Emitter Base Voltage (VEBO)
6 V
Frequency
180 MHz
Gain Bandwidth Product
180 MHz
hFE Min
270
Max Breakdown Voltage
3:00 AM
Max Collector Current
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
-55 °C
Min Operating Temperature
-55 °C
Number of Elements
1
Packaging
Cut Tape
Polarity
PNP
Power Dissipation
2 W
Termination
SMD/SMT
Transition Frequency
180 MHz

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