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Central Semiconductor 2N2222A

2N Series 40 V 800 mA NPN Through Hole Silicon Transistor - TO-18

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Compliance

Lead Free
Lead Free
Radiation Hardening
No
RoHS
Compliant

Dimensions

Height
5.33 mm

Physical

Case/Package
TO-18
Mount
Through Hole
Number of Pins
3

Technical

Collector Base Voltage (VCBO)
75 V
Collector Emitter Breakdown Voltage
40 V
Collector Emitter Saturation Voltage
1 V
Collector Emitter Voltage (VCEO)
40 V
Element Configuration
Single
Emitter Base Voltage (VEBO)
6 V
Frequency
250 MHz
Gain Bandwidth Product
300 MHz
hFE Min
35
Max Collector Current
800 mA
Max Frequency
300 MHz
Max Junction Temperature (Tj)
200 °C
Max Operating Temperature
200 °C
Max Power Dissipation
500 mW
Min Operating Temperature
-65 °C
Number of Elements
1
Packaging
Bulk
Polarity
NPN
Power Dissipation
500 mW
Transition Frequency
300 MHz

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