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Central Semiconductor 2N2102

Transistor GP BJT NPN 65V 1A 3-Pin TO-39 Box

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Compliance

RoHS
Compliant

Physical

Case/Package
TO-39
Mount
Through Hole

Technical

Collector Base Voltage (VCBO)
120 V
Collector Emitter Breakdown Voltage
65 V
Collector Emitter Saturation Voltage
500 mV
Collector Emitter Voltage (VCEO)
65 V
Continuous Collector Current
1:00 AM
Element Configuration
1 A
Emitter Base Voltage (VEBO)
7 V
Gain Bandwidth Product
60 MHz
hFE Min
1:00 AM
Max Collector Current
1 A
Max Operating Temperature
150 °C
Max Power Dissipation
1 W
Min Operating Temperature
-65 °C
Polarity
NPN
Transition Frequency
60 MHz

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