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Alpha & Omega Semiconductor AON6560

Power Field-Effect Transistor, 30A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

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Compliance

RoHS
Compliant

Dimensions

Height
1 mm

Physical

Case/Package
DFN
Mount
-55 °C

Supply Chain

Lifecycle Status
Production

Technical

Continuous Drain Current (ID)
200 A
Drain to Source Breakdown Voltage
30 V
Drain to Source Resistance
550 µΩ
Drain to Source Voltage (Vdss)
550 µΩ
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
11.5 nF
Manufacturer Package Identifier
150 °C
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Min Operating Temperature
7.3 W
Number of Channels
1
Power Dissipation
7.3 W
Rds On Max
680 mΩ
Threshold Voltage
680 mΩ
Turn-Off Delay Time
115.5 ns
Turn-On Delay Time
16 ns

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